Bi掺杂开关柜CuCr40触头材料的制备及电弧行为研究

Study on preparation and arc behavior of CuCr40 contact materials for Bi doped switch cabinet

  • 摘要: 本研究采用高能球磨与放电等离子烧结(SPS)技术相结合制备不同含量Bi掺杂CuCr40电触头材料,对触头的硬度、电导率、致密度以及电击穿过程中表面电弧运动行为和侵蚀形貌进行表征,分析其抗电弧侵蚀特性。结果表明,Bi掺杂含量为2.5%和7.5%的CuCr合金均能满足触头材料的基本性能要求,真空阴极放电后,Bi掺杂量为7.5%的触头电弧运动阴极斑点面积大,且外围烧蚀区浅,表现出良好的电弧分散特性。同时,电弧烧蚀后Bi掺杂触头没有明显的烧蚀坑和裂纹。综合研究结果表明,Bi掺杂量为7.5%的CuCr触头表现出良好的电弧运动和抗电弧侵蚀特性。

     

    Abstract: This study combines high-energy ball milling with spark plasma sintering (SPS) technology to prepare CuCr40 electrical contact materials with different Bi doping contents. The hardness, electrical conductivity, density, and the behavior of surface arc motion and erosion morphology during the electrical breakdown process of the contacts were characterized, and their arc erosion resistance was analyzed. The results show that CuCr alloys doped with 2.5% and 7.5% Bi can meet the basic performance requirements of contact materials. After vacuum cathode discharge, the contact with 7.5% Bi doping has a larger cathode spot area and a shallower peripheral ablation zone, demonstrating good arc dispersion characteristics. At the same time, after arc ablation, the Bi-doped contacts show no significant ablation pits or cracks. The comprehensive research results indicate that the CuCr contact with 7.5% Bi doping exhibits good arc motion and arc erosion resistance characteristics.

     

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