国产非晶硅平板探测器在不同射线激励下的成像性能测试

Imaging Performance Testing of Domestic Amorphous Silicon Flat Panel Detectors under Different Radiation Excitations

  • 摘要: 本文针对CsI和GOS闪烁体材料非晶硅平板探测器(型号3025ZF),评估了其在连续谱X射线、脉冲X射线及γ射线激励下的成像性能。实验结果表明,在连续谱X射线和脉冲X射线激励下,两种探测器均满足NB/T 47013.11-2023标准的A级图像分辨率和灵敏度要求,其中CsI探测器在分辨率和灵敏度上表现更优,而GOS探测器在信噪比方面更具优势。然而,在γ射线激励下,两种探测器成像质量显著下降,图像灵敏度和图像分辨率均未能达到标准要求,主要受限于γ射线的高能量和较大焦点尺寸。研究结果为DR系统探测器选型提供了实验依据,并为不同应用场景的适用性提供了参考。

     

    Abstract: Imaging performance of amorphous silicon flat panel detectors (model 3025ZF) with CsI and GOS scintillator materials under continuous-spectrum X-ray, pulsed X-ray, and γ-ray excitations were evaluated in this study. The experimental results show that under both continuous-spectrum X-ray and pulsed X-ray excitations, both detectors meet the Class A image resolution and sensitivity requirements of the NB/T 47013.11-2023 standard. Among them, the CsI detector demonstrates superior performance in resolution and sensitivity, while the GOS detector excels in signal-to-noise ratio. However, under γ-ray excitation, the imaging quality of both detectors significantly declines, with both image sensitivity and resolution failing to meet the standard requirements, primarily due to the high energy and larger focal spot size of γ-rays. The research results provide experimental evidence for the selection of DR system detectors and offer references for their applicability in different application scenarios.

     

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